Invited Speakers

Dr. Takeshi Aoki
Sumitomo Electric Industries, Ltd., Japan


Talk Title:
High-power CW/Pulsed Operations of 1.55-μm-wavelength Photonic-crystal Surface-emitting Lasers

Abstract: 1.55-μm InP-based PCSELs with double-lattice photonic-crystal structures are developed. We demonstrate a single-mode CW output power of 250 mW for a 200-μm-size device and an output power exceeding 30 W with a narrow divergence angle of ~1° under nanosecond pulsed conditions for a 400-μm-size device.

Bio:

Takeshi Aoki is engaged in development of optoelectronics devices including InP-based PCSELs at the Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd., Japan. He received the M.E. degree from Yokohama National University, Japan in 2010, and his Ph.D. degree from Nara Institute of Science and Technology, Japan in 2016.

Prof. Detlev Grützmacher
Forschungszentrum Jülich, Germany


Talk Title:
Continuous Wave Operation of Electrically Pumped GeSn/SiGeSn Multiple Quantum Well Laser

Abstract: A electrically-pumped laser emitting at a near-infrared wavelength of 2.35 µm with a low threshold current of 4 mA is presented. It is based on a 6 periods SiGeSn/GeSn multiple quantum-well heterostructure and features a small footprint micro-disk cavity. It operates in continuous-wave (CW) regime.

Bio:

Since 2006: Director of the Peter Grünberg Institute for Semiconductor Nanoelectronics (Germany). 1993-2006: Group leader for Silicon Photonics at Laboratory for Micro and Nanotechnology, Paul Scherrer Institute (Switzerland). 1991-1993: Postdoc at IBM thomas Watson Research Center in Yorktown Heights (US). 1988-1991: PhD student at RWTH Aachen, Instute for Semiconductor Technology.

Dr. Songtao Liu
Intel, USA


Talk Title: Heterogeneously integrated multiwavelength semiconductor lasers for optical I/O applications

Abstract:
Semiconductor lasers play a pivotal role in modern optical I/O architectures, facilitating high-speed data transmission and communication. In this presentation, I will delve into Intel’s groundbreaking developments in heterogeneously integrated light source technology, specifically tailored for the 300 mm silicon platform. This innovative technology not only promises enhanced performance and efficiency but also opens doors to new possibilities in data center networking, telecommunications, and beyond.

Bio:

Bio: Songtao Liu received his Ph.D. degree in microelectronics and solid-state electronics from the University of Chinese Academy of Sciences, Beijing, China, 2017. His research interests include III–V/silicon photonic integrated circuits, semiconductor lasers, semiconductor physics, optical interconnects, and microwave photonics. He has authored or coauthored more than 90 journal and conference papers. He is currently with Intel Labs, USA with a focus on silicon photonics for optical I/O interconnect applications.

Dr. Sylvie Menezo
Scintil Photonics, France


Talk Title: Silicon Photonic Circuit technology augmented with III-V/Si lasers and amplifiers integrated on the backside of advanced Silicon Photonic wafers.

Abstract:
We present our III-V-augmented silicon photonics technology. III-V based lasers and amplifiers are monolithically integrated on the backside of advanced silicon photonic wafers comprising Si, Ge and SiN devices. Components and circuits performance will be presented.

Bio:

Dr. Sylvie Menezo is CEO of SCINTIL Photonics, which she co-founded in November 2018 from CEA-Leti to develop and exploit a “laser/Si” integration technology. Previously Menezo led the Silicon Photonics activities at CEA-Leti (2012-2017), worked at Sercel, Alcatel, Thales and obtained a thesis at CNET Bagneux in 1999. Menezo is a member of the board of ePIXfab.

Mr. Chenziyi Mi
Yale University, USA


Talk Title:
A New Pathway to InP SWIR VCSELs Through Nanoporous Engineering

Abstract: We propose a conductivity-selective electrochemical porosification process which led to the realization of high-index-contrast InP DBRs. Based on which, continuous-wave (CW) operation of NP-InP VCSELs were demonstrated at both 1,380 and 1,550 nm from two separate structures with milli-watts output power.

Bio:

Chenziyi is a graduate student at electrical engineering department of Yale University. He is pursuing a PhD degree under the guidance of Prof. Jung Han. His research interest is InP based VCSELs in the short-wave infrared range.

Dr. Alex Song
University of Sydney, Australia


Talk Title:
Scaling of Surface-emitting Lasers with Perturbed Dirac Cone

Abstract:
We discuss a lower bound of the quality-factor angular selectivity in planar optical devices. Such a bound determines the upper limit of the size and power of photonic-crystal surface-emitting lasers and the performance of angle-selective detectors. We present a design that reaches this bound based on a perturbed Dirac-cone band structure.

Bio:

Dr. Alex Y. Song is a Senior Lecturer in the School of Electrical and Computer Engineering and by courtesy the School of Chemical and Biomolecular Engineering at The University of Sydney. He conducted postdoctoral research in the E. L. Ginzton Laboratory and the Department of Electrical Engineering at Stanford University. He received his Ph.D. in Electrical Engineering from Princeton University. He completed his B.S. in Mathematics and Physics and M.S. in Electrical Engineering at Tsinghua University.

Dr. Anna Tauke-Pedretti
DARPA, USA


Talk Title:
New Opportunities Enabled by Photonic Scaling Recent advancements in the scaling of photonic integrated circuits have enabled new photonic applications and capabilities.

Abstract:
This talk will share recent DARPA program investments in enabling this scaling. It will also discuss the new challenges and opportunities these architectures present.

Bio:

Dr. Anna Tauke-Pedretti is a program manager in DARPA’s Microsystems Technology Office. She was a manager and technical staff member at Sandia National Laboratories from 2008 to 2022. She received Bachelor of Science degrees from the University of Iowa, as well as Master of Science and Doctor of Philosophy degrees from the University of California, Santa Barbara.

Ms. Asami Uchiyama
Mitsubishi Electric Corporation, High Frequency & Optical Device Works, Japan


Talk Title:
225 Gb/s PAM4 EMLs for 800 Gb/s and 1.6T b/s Transceivers

Abstract:
We developed high-speed electro-absorption modulator integrated lasers (EMLs) with a hybrid waveguide structure and experimentally demonstrated 2-km and 10-km transmission operated at 225 Gb/s four-level pulse amplitude modulation (PAM4). Clear eye diagrams were observed over a wide wavelength range.

Bio:

Asami Uchiyama received her B.S. and M.S. degrees in Condensed Matter Physics from Tokyo Institute of Technology, Tokyo, Japan, in 2010 and 2012, respectively. She joined Mitsubishi Electric Corp. in 2012. She has been engaged in developing high-speed optical semiconductor devices for optical communication.

Dr. Jukka Viheriälä
Tampere University, Finland


Talk Title:
Hybrid Integrated 2 – 3 µm Lasers for Miniaturized Spectral Sensors

Abstract:
2-3 µm wavelength range has multitude of spectral fingerprints linking to medical, industrial and environmental applications creating need for affordable and miniaturized sensors. Talk addresses development of light source and sensing platform based on use of silicon photonics and GaSb-technology.

Bio:

Dr. Jukka Viheriälä’s (Adj. Prof.) research is linked to development of novel optoelectronic devices and integrated photonics circuits with expertise in semiconductor chip design, fabrication and testing and in developing methodology to interface chips. Besides his academic work Viheriälä has been active in commercialization of TAU and Aalto University research.